Indium phosphide

Indium phosphide
Names
Other names
Indium(III) phosphide
Identifiers
22398-80-7 YesY
3D model (Jmol) Interactive image
ChemSpider 28914 YesY
ECHA InfoCard 100.040.856
PubChem 31170
Properties
InP
Molar mass 145.792 g/mol
Appearance black cubic crystals
Density 4.81 g/cm3, solid
Melting point 1,062 °C (1,944 °F; 1,335 K)
Solubility slightly soluble in acids[1]
Band gap 1.344 eV (300 K; direct)
Electron mobility 5400 cm2/(V·s) (300 K)
Thermal conductivity 0.68 W/(cm·K) (300 K)
3.1 (infrared);
3.55 (632.8 nm)[2]
Structure
Zinc blende
a = 5.8687 Å [3]
Tetrahedral
Thermochemistry
45.4 J/(mol·K)[4]
59.8 J/(mol·K)
-88.7 kJ/mol
Hazards
Main hazards Toxic, hydrolysis to phosphine
Safety data sheet External MSDS
Related compounds
Other anions
 Indium nitride
Indium arsenide
Indium antimonide
Other cations
 Aluminium phosphide
Gallium phosphide
Related compounds
 Indium gallium phosphide
Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Manufacturing

Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Artificially colored.

Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.[6]

Uses

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.[7]

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Chemistry

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.[8]

References

  1. ↑ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2
  2. ↑ Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), "The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry", Journal of Materials Science Letters, 12 (10): 721, doi:10.1007/BF00626698.
  3. ↑ "Basic Parameters of InP".
  4. ↑ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0-8493-0594-2
  5. ↑ Indium Phosphide at HSDB
  6. ↑ InP manufacture
  7. ↑ Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier. April 2005
  8. ↑ Bouarissa, Nadir (July 2011). "Phonons and related crystal properties in indium phosphide under pressure". Physica B: Condensed Matter. 406 (13): 2583–2587. doi:10.1016/j.physb.2011.03.073. Retrieved 22 March 2013.
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